Optics of Semiconductors and Their Nanostructures by Stephan W. Koch, Mackillo Kira (auth.), Professor Dr. Heinz

By Stephan W. Koch, Mackillo Kira (auth.), Professor Dr. Heinz Kalt, Dr. Michael Hetterich (eds.)

In fresh years the sphere of semiconductor optics has been driven to a number of extremes. the dimensions of semiconductor buildings has reduced in size to dimensions of some nanometers, the semiconductor-light interplay is studied on timescales as quickly as a number of femtoseconds, and delivery homes on a size scale some distance under the wavelength of sunshine were printed. those advances have been pushed through quick advancements in either semiconductor and optical applied sciences and have been extra facilitated via growth within the theoretical description of optical excitations in semiconductors. This ebook, written by means of best specialists within the box, offers an up to date creation to the optics of semiconductors and their nanostructures that allows you to support the reader comprehend those interesting new advancements. It additionally discusses lately tested purposes, similar to blue-light emitters, in addition to the hunt for destiny purposes in components reminiscent of spintronics, quantum details processing, and third-generation sunlight cells.

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R. Notzel, L. N. Ledentsov, K Ploog: Appl. Phys. Lett. 60, 1615 (1992) 32. G. Ivanov, T. Egilsson, A. Henry, B. Monemar, E. Janzen: Phys. Rev. B 64, 085203 (2001) 33.

8313 eV. I a. ::! 800 o 5 10 15 Exciton Kinetic Energy (meV) Fig. 3. 3 nm ZnSe/ZnSSe quantum well. The left panel shows the measured PSB spectra at various time delays after pulsed laser excitation. The corresponding energy distribution functions deduced from these spectra are shown in the right panel. Hot Excitons in ZnSe Quantum Wells 31 This defines the initial kinetic energy of excitons to be 15 me V. In Fig. 3 we see that the initial exciton distribution is narrow and centered at 15meV. The width of the initial distribution can be attributed to the spectral resolution of the system.

From the measured first and second order PSB's, we obtain the Huang-Rhys factor by using (8). The result is shown in Fig. 2 as the solid curve [24]. We also calculate this factor from (6) and (9), as shown as the dashed curve in Fig. 2. Except for an unknown scaling factor, the theoretical curve coincides well with the experimental result for excitons with Ek > 3meV. For cold excitons, the discrepancy between theory and experiment can be attributed to the influence of disorder that may localize the excitons.

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